~ 021rum mur160 designed for use in switching power supplies, inverters a nd as free wheeling diodes, these state?of?the?art devices have the followi ng features: features ? ultra fast 50 and 75 nano second recovery times ? 175c operating junction temperature ? low forward voltage ? low leakage cu rrent ? high temperature glass passivated junction ? reverse voltage to 6 00 volts high temperature soldering : 260 ? o c / 10 seconds at terminals ? pb free product a t available : 9 9% sn above meet rohs environment sub stance directive request mechanical characteristics: ? case : epoxy , molded ? weight: 0.4 gram (approximately ) ? finish : all external surfaces corrosion resi stant and terminal leads are readily solderable ? lead and mounting surface temperature fo r soldering purposes: 2 20c max . for 10 seconds, 1 /16, from case ? shipped in plastic bags, 1000 per bag ? av ailable tape and reeled , 5 000 per reel , by adding a ?rl?? su ffix to the part number ? polarity: cathode indica ted by polarity band ? ma r king : MUR120, mur140 , mur160 maximum ratings mur rati ng symbol 120 140 160 uni t peak repetitive reverse voltage working peak reverse voltage dc blocking voltage vrrm vrwm vr 200 400 600 volts average rectified forward current (square wave mounting method #3 per note 1) if(av) 1.0 @ t a = 130c 1.0 @ t a = 120c amps nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) ifsm 30 amps operating junction temperature and storage temperature tj, tstg -55 to +150 c thermal characteristics maximum thermal resistance, junction to ambient rqja see note 1 c/w electrical characteristics maximum instantaneous forward voltage (1) (i f = 1.0 amp, tj = 150c) (i f = 1.0 amp, t j = 25c) vf 0.875 1.00 0.875 1.00 1.00 1.30 volts maximum instantaneous reverse current (1) (rated dc voltage, t j = 150c) (rated dc voltage, t j = 25c) ir 50 5 150 5 150 5 ua maximum reverse recovery time (if = 0.5 amp, ir = 1.0 amp, irec = 0.25 a) t rr 50 50 50 ns .034 (.86) .028 (.71) .205 (5.2) .160 (4.1) .107 (2.7) .080 (2.0) dia. dia. do-41 unit:inch(mm) 1.0 (25.4) min. 1.0 (25.4) min. data sheet semiconductor (1) pulse test: pulse width = 300 ms, duty cycle 3 2.0%. http://www.yeashin.com 1 rev.02 20110725
MUR120 http://www.yeashin.com 2 rev.02 20110725 50 1.0 75 1.25 1.5 25 100 125 150 175 0 0.75 0.5 0.25 single phase half wave 60h z resistive or inductive load 0.375"(9.5mm)lead length 0.04 0.06 0.02 4 20 0.01 0.1 0.2 0.4 0.6 1 2 6 10 0.7 0.9 0.5 1.1 1.3 1.5 t j =25 pulse w idth=300 s m ur105-m ur120 m ur160 m ur130-m ur150 amperes instantaneous forward voltage, volts number of cycles at 60hz fig.3 -- typical junction capacitance fig.1 -- typical forward characteristics fig.2 -- forward drating curve amperes instantaneous forward current average forward current junction capacitance. pf reverse voltage,volts t j =25 f=1.0mhz 1 2 4 6 10 20 40 60 100 0.1 0.2 0.4 1 2 4 10 40 100 20
061 , 0 41rum http://www.yeashin.com 3 rev.02 20110725 micro amperes amperes notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . percent of rated peak reverse voltage, % number of cycles at 60hz fig.6 -- test circuit diagram and reverse recovery time characteristic fig.4 -- typical reverse characteristics instantaneous reverse leakage current fig.5 -- peak forward surge current set time base for 10/20 ns/cm peak forward surge current 20 40 .01 .02 60 80 100 120 .04 .1 t a =100 .2 .4 1 2 10 4 40 20 100 140 t a =25 t a =150 1 2 0 10 30 4 10 20 40 50 60 20 40 100 8.3ms single half sine-wave -1.0a -0.25a 0 +0.5a t rr 1cm 10 n 1. 1 nonin- ductive 50 n 1. (+) 25vdc (approx) (-) d.u.t. pulse generator (note2) oscilloscope (note 1) c c c
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